smd type ic smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source KDB5690 features 32 a, 60 v. r ds(on) = 0.027 @v gs =10v r ds(on) = 0.032 @v gs =6v critical dc electrical parameters specified at elevated temperature. rugged internal source-drain diode can eliminate the need for an external zener diode transient suppressor. high performance trench technology for extremely low r ds(on) . 175 maximum junction temperature rating. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gs 20 v drain current continuous 32 a drain current pulsed 100 a power dissipation @ t c =25 p d 58 w derate above 25 p d 0.4 w/ operating and storage temperature t j ,t stg -65 to 175 thermal resistance junction to case r jc 2.6 /w thermal resistance junction to ambient r ja 62.5 /w i d smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit single pulse drain-source avalanche energy * w dss v dd =30v,i d = 32a 80 mj maximum drain-source avalanche current i ar 32 a drain?source breakdown voltage b vdss v gs =0v,i d =250 a 60 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 61 mv/ zero gate voltage drain current i dss v ds =48v,v gs =0v 1 a gate-body leakage, forward i gssf v gs =20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds = 0 v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 22.54 v gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 -6.4 mv/ v gs =10v,i d = 16 a 0.021 0.027 v gs =10v,i d =16a,tj=125 0.042 0.055 v gs =6v,i d =15 a, 0.024 0.032 on?state drain current i d(on) v gs =10v,v ds =5v 50 a forward transconductance g fs v ds =5v,i d =16a 32 s input capacitance c iss 1120 pf output capacitance c oss 160 pf reverse transfer capacitance c rss 80 pf turn-on delay time t d(on) 10 18 ns turn-on rise time tr 9 18 ns turn-off delay time t d(off) 24 39 ns turn-off fall time t f 10 18 ns total gate charge q g 23 33 nc gate?source charge q gs 3.9 nc gate?drain charge q gd 6.8 nc maximum continuous drain-source diode forward current i s 32 a drain-source diode forward voltage v sd v gs =0v,i s = 16 a * 0.92 1.2 v * pulse test: pulse width 300 s, duty cycle 2.0% v ds =1v,i d =16a,v gs =10v* m r ds(on) static drain-source on-resistance v dd =30v,i d =1a,v gs =10v,r gen =6 * v ds =25v,v gs =0v,f=1.0mhz smd type ic smd type transistors KDB5690 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com
|
